Single Event Effects
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From detailed fully physical simulation to abstract phenomenon-based calculation, Cogenda has considerable experiences in Single Event Effects related problems. What we usually do includes:
- Analyzing SEE through mechanism simulation
- Predicting SEE rate on space orbit
- SEE hardening by design
Application examples for download:
Total Ionizing Dose Effect
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From radiation to dose distribution, then to trapped charge distribution and traps at interfaces, then to device response (current leakage, etc.), Cogenda provides comprehensive simulation solutions. By adding parasitic transistors, TID effects can be characterized simply and precisely.
Cogenda also provides TID hardening design servies and software for on-orbit dose prediction.
Application example for download: CMOS Transistor.
Image Sensors and Solar Cells
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The range of our simulation can cover from light propagation and carrier behavior (3D), then to electronic parameters. From image sensor, these physical varieties can be analyzed or optimized quantitatively though our simulation:
- Internal quantum efficiency
- Dark current
- Dynamic range
Application example for download: CMOS image Sensor.
GGNMOS ESD Protection
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Gate grounded N-MOS (ggNMOS) transistor is a popular ESD protection device. In our simulation, the ggNMOS device is triggered by impact ionization processes in the drain-substrate junction, so impact ionization models are important. In Genius, a few impact ionization models are implemented, as detailed in its user's guide. Lattice temperature equations can be enabled in Genius simulation. Additionally, Genius allows the user to specify thermal boundary conditions to model heat lost at the surroundings.
Application example for download: ggNMOS.
THz, RF Devices
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A typical HBT device simulation includes these parts:
- A DC characterization of HBT, which performs an Ic~Vbe simulation and computes a family of Ic~Vce curves.
- A small signal simulation, which computes cut-off frequency fT.
- A small signal simulation, which performs a two-port network analysis.
Monte Carlo Simulation of Ionizing Radiation
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Do you need to deal with ionizing radiations? Do you need to compute it? Do you need dedicated software to simulate the radiation?
Cogenda has comprehensive experiences in this field. What we do usually includes:
- To develop dedicated software with Monte Carlo simulation and other physical processes
- To help customers to develop their own software
Disk-less Computer Cluster
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Do you have heavy computation tasks? Do you think that computer cluster is too expensive?
You need us.
Computer cluster used be the very expensive. But this is a fast developing business. Nowadays, you don't need much money to have a computational cluster. Cogenda provides a series of solutions for disk-less cluster with efficient OS and workload managing software.
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WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
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What's New
- VisualTCAD 2024.10 released [2024-11-04]
- VisualTCAD 2024.06 released [2024-07-18]
- VisualTCAD 2024.03 released [2024-04-09]
- VisualTCAD 2024.02 released [2024-03-05]
- VisualTCAD 2023.12 released [2024-01-17]
- VisualTCAD 2023.11 released [2023-12-07]
- MozzTCAD 2023.10 released [2023-11-06]
- VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
- VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
- VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- Vspice 2.2 released [2019-4-15]
- Vspice 2.0 released [2018-10-20]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- Vspice 1.0 released [2017-4-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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3D SRAM Simulation
A 3D SRAM model with 96,000 nodes.
Create the model directly from mask layout and you can simulate circuit cells at stunning speed.